SW1N60L
SEMIPOWER
453.21kb
Mosfet. This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteri
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SW1N60 - MOSFET
(SEMIPOWER)
SAMWIN
SW1N60
N-channel MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 12 Ω)@VGS=10V ■ Gate Charge (Max 6nC) ■ Improved dv/dt Capability ■ 100% A.
SW1N60A - MOSFET
(SEMIPOWER)
SAMWIN
SW1N60A
N-channel MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 15 Ω)@VGS=10V ■ Gate Charge (Max 6nC) ■ Improved dv/dt Capability ■ 100% .
SW1N60A - SSW1N60A
(Fairchild Semiconductor)
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology
..
SSW/I1N60A
BVDSS = 600 V RDS(on) = 12 Ω I.
SW1N60C - N-channel D-PAK/I-PAK/TO-92 MOSFET
(SAMWIN)
SAMWIN
SW1N60C
N-channel D-PAK/I-PAK/TO-92 MOSFET
Features
TO-251
TO-252
TO-92
■ High ruggedness ■ RDS(ON) (Max 9 Ω)@VGS=10V ■ Gate Charge (Typ.
SW1N60D - MOSFET
(SEMIPOWER)
SAMWIN
SW1N60D
N-channel I-PAK/TO-92 MOSFET
Features
TO-251
TO-92
■ High ruggedness ■ RDS(ON) (Max8.5Ω)@VGS=10V ■ Gate Charge (Typical 6.8 nC) ■.
SW1N60E - N-channel Enhanced mode TO-92/TO-251 MOSFET
(SEMIPOWER)
SW1N60E
N-channel Enhanced mode TO-92/TO-251 MOSFET
Features
TO-92
TO-251
High ruggedness Low RDS(ON) (Typ7.3Ω)@VGS=10V Low Gate Charge (Ty.
SW1N55D - MOSFET
(SEMIPOWER)
SAMWIN
SW1N55D
N-channel IPAK MOSFET
Features
TO-251
■ High ruggedness ■ RDS(ON) (Max6.5Ω)@VGS=10V ■ Gate Charge (Typical 7nC) ■ Improved dv/dt C.
SW1N70A - MOSFET
(SEMIPOWER)
SAMWIN
SW1N70A
N-channel MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 15 Ω)@VGS=10V ■ Gate Charge (Max 5nC) ■ Improved dv/dt Capability ■ 100% .
SW1N70C - MOSFET
(SEMIPOWER)
SAMWIN
SW1N70C
Features
■ High ruggedness ■ RDS(ON) (Max 16 Ω)@VGS=10V ■ Gate Charge (Max 6nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
.
SW1N80A - MOSFET
(SEMIPOWER)
SAMWIN
SW1N80A
N-channel MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 16 Ω)@VGS=10V ■ Gate Charge (Max 7nC) ■ Improved dv/dt Capability ■ 100% .
