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SW1N60L

MOSFET

SW1N60L Features

* High ruggedness

* RDS(ON) (Max 23 Ω)@VGS=10V

* Gate Charge (Max 4.5nC)

* Improved dv/dt Capability

* 100% Avalanche Tested TO-92 1 2 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable

SW1N60L General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at AC adap.

SW1N60L Datasheet (453.21 KB)

Preview of SW1N60L PDF

Datasheet Details

Part number:

SW1N60L

Manufacturer:

SEMIPOWER

File Size:

453.21 KB

Description:

Mosfet.

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SW1N60L MOSFET SEMIPOWER

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