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SW1N55D

MOSFET

SW1N55D Features

* TO-251

* High ruggedness

* RDS(ON) (Max6.5Ω)@VGS=10V

* Gate Charge (Typical 7nC)

* Improved dv/dt Capability

* 100% Avalanche Tested 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology ena

SW1N55D General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high ef.

SW1N55D Datasheet (499.54 KB)

Preview of SW1N55D PDF

Datasheet Details

Part number:

SW1N55D

Manufacturer:

SEMIPOWER

File Size:

499.54 KB

Description:

Mosfet.

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SW1N55D MOSFET SEMIPOWER

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