ZTX749 Datasheet - Fairchild Semiconductor

ZTX749, PNP Low Saturation Transistor

ZTX749 ZTX749 PNP Low Saturation Transistor * This device are designed with high current gain and low saturation voltage with collector curre

Applications

* involving pulsed or low duty cycle operations. Electrical Characteristics TA=25°C unless otherwise noted Symbol Off Characteristics BVCEO BVCBO BVEBO ICBO IEBO hFE Parameter Test Condition IC = -10mA IC = -100µA IE = -100µA VCB = -30V VCB = -30V, TA = 100°C VEB = -4V IC = -50mA, VCE = -2V IC = -1A,

ZTX749_FairchildSemiconductor.pdf