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MJE803 Datasheet - Fairchild

MJE803 NPN Epitaxial Silicon Darlington Transistor

MJE800/801/802/803 MJE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors High DC Current Gain : hFE= 750 (Min.) @ IC= 1.5 and 2.0A DC Complement to MJE700/701/702/703 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base C.

MJE803 Datasheet (51.87 KB)

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Datasheet Details

Part number:

MJE803

Manufacturer:

Fairchild

File Size:

51.87 KB

Description:

Npn epitaxial silicon darlington transistor.

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MJE803 NPN Epitaxial Silicon Darlington Transistor Fairchild

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