Datasheet Specifications
- Part number
- NDB410A
- Manufacturer
- Fairchild
- File Size
- 74.01 KB
- Datasheet
- NDB410A_FairchildSemiconductor.pdf
- Description
- N-Channel MOSFET
Description
May 1994 NDP410A / NDP410AE / NDP410B / NDP410BE NDB410A / NDB410AE / NDB410B / NDB410BE N-Channel Enhancement Mode Field Effect Transistor General D.Features
* 9 and 8A, 100V. RDS(ON) = 0.25 and 0.30Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/inNDB410A Distributors
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