Datasheet4U Logo Datasheet4U.com

NDB410AE Datasheet - Fairchild

NDB410AE_FairchildSemiconductor.pdf

Preview of NDB410AE PDF
NDB410AE Datasheet Preview Page 2 NDB410AE Datasheet Preview Page 3

Datasheet Details

Part number:

NDB410AE

Manufacturer:

Fairchild

File Size:

74.01 KB

Description:

N-channel mosfet.

NDB410AE, N-Channel MOSFET

These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high ener

NDB410AE Features

* 9 and 8A, 100V. RDS(ON) = 0.25 and 0.30Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/in

📁 Related Datasheet

📌 All Tags

Fairchild NDB410AE-like datasheet