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NDB410BE N-Channel MOSFET

NDB410BE Description

May 1994 NDP410A / NDP410AE / NDP410B / NDP410BE NDB410A / NDB410AE / NDB410B / NDB410BE N-Channel Enhancement Mode Field Effect Transistor General D.
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

NDB410BE Features

* 9 and 8A, 100V. RDS(ON) = 0.25 and 0.30Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/in

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N-Channel MOSFET Fairchild
Fairchild NDB410BE-like datasheet