NDB6030PL P-Channel MOSFET

Fairchild

Description

June 1997 NDP6030PL / NDB6030PL P-Channel Logic Level Enhancement Mode Field Effect Transistor General .
These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS techno.

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Datasheet Specifications

Part number: NDB6030PL
Manufacturer: Fairchild
File Size: 56.60 KB
Datasheet: NDB6030PL_FairchildSemiconductor.pdf
Description: P-Channel MOSFET

Features

* -30 A, -30 V. RDS(ON) = 0.042 Ω @ VGS= -4.5 V RDS(ON) = 0.025 Ω @ VGS= -10 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High density cell design for extremely low RD

NDB6030PL Distributors

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NDB6030PL P-Channel MOSFET Fairchild

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