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NDB6030PL

P-Channel MOSFET

NDB6030PL Features

* -30 A, -30 V. RDS(ON) = 0.042 Ω @ VGS= -4.5 V RDS(ON) = 0.025 Ω @ VGS= -10 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High density cell design for extremely low RD

NDB6030PL General Description

These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage app.

NDB6030PL Datasheet (56.60 KB)

Preview of NDB6030PL PDF

Datasheet Details

Part number:

NDB6030PL

Manufacturer:

Fairchild

File Size:

56.60 KB

Description:

P-channel mosfet.

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TAGS

NDB6030PL P-Channel MOSFET Fairchild

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