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NDB6030 Datasheet N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: July 1997 NDP6030 / NDB6030 N-Channel Enhancement Mode Field Effect Transistor.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process has been especially tailored to minimize on-state resistance and provide superior switching performance.

These devices are particularly suited for low voltage applications such as DC/DC converters and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Key Features

  • 46 A, 30 V. RDS(ON) = 0.018 @ VGS=10 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount.

More Datasheets from Fairchild (now onsemi)

Part Number Description
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NDB603 N-Channel MOSFET
NDB603AL N-Channel MOSFET
NDB6020 N-Channel MOSFET
NDB6020P N-Channel MOSFET
NDB6050 N-Channel MOSFET
NDB6050L N-Channel MOSFET
NDB6051 N-Channel MOSFET
NDB6060 N-Channel MOSFET

NDB6030 Distributor