NDB6030 Overview
Key Specifications
Max Operating Temp: 175 °C
Min Operating Temp: -65 °C
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance and provide superior switching performance.
Key Features
- RDS(ON) = 0.018 @ VGS=10 V
- Critical DC electrical parameters specified at elevated temperature
- Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor
- 175°C maximum junction temperature rating
- High density cell design for extremely low RDS(ON)
