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NDB6030L Datasheet N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: June 1996 NDP6030L / NDB6030L N-Channel Logic Level Enhancement Mode Field Effect.

General Description

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Key Features

  • 52 A, 30 V. RDS(ON) = 0.0135 Ω @ VGS=10 V RDS(ON) = 0.020 Ω @ VGS=4.5 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High density cell design for extremely low RDS(ON). 175°C maximum junction temperature rating. _______________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VGSS ID Parameter Drain-Sour.

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NDB6030L Distributor