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NDB610BE Datasheet - Fairchild

N-Channel MOSFET

NDB610BE Features

* 26 and 24A, 100V. RDS(ON) = 0.065 and 0.080Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 millio

NDB610BE General Description

These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high ener.

NDB610BE Datasheet (73.92 KB)

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Datasheet Details

Part number:

NDB610BE

Manufacturer:

Fairchild

File Size:

73.92 KB

Description:

N-channel mosfet.
May 1994 NDP610A / NDP610AE / NDP610B / NDP610BE NDB610A / NDB610AE / NDB610B / NDB610BE N-Channel Enhancement Mode Field Effect Transistor General D.

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NDB610BE N-Channel MOSFET Fairchild

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