NDB6020 Datasheet - Fairchild

NDB6020 N-Channel MOSFET

These logic level N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan.

NDB6020 Features

* 35 A, 20 V. RDS(ON) = 0.023 Ω @ VGS= 4.5 V RDS(ON) = 0.028 Ω @ VGS= 2.7 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High

NDB6020_FairchildSemiconductor.pdf