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NDB6020 N-Channel MOSFET

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Description

November 1996 NDP6020 / NDB6020 N-Channel Logic Level Enhancement Mode Field Effect Transistor General .
These logic level N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technol.

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Features

* 35 A, 20 V. RDS(ON) = 0.023 Ω @ VGS= 4.5 V RDS(ON) = 0.028 Ω @ VGS= 2.7 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High

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