NDB6030L Datasheet - Fairchild

NDB6030L, N-Channel MOSFET

June 1996 NDP6030L / NDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancem

Features

* 52 A, 30 V. RDS(ON) = 0.0135 Ω @ VGS=10 V RDS(ON) = 0.020 Ω @ VGS=4.5 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High density cell design for extremely low RDS(ON)

NDB6030L_FairchildSemiconductor.pdf