NDB6030L - N-Channel MOSFET

Fairchild

NDB6030L Datasheet Preview — Preview of NDB6030L PDF

Datasheet Details

Part number	NDB6030L
Manufacturer	Fairchild ↗
File Size	357.87 KB
Description	N-Channel MOSFET
Datasheet	NDB6030L_FairchildSemiconductor.pdf

NDB6030L Product details

Description

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

Features

52 A, 30 V. RDS(ON) = 0.0135 Ω @ VGS=10 V RDS(ON) = 0.020 Ω @ VGS=4.5 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High density cell design for extremely low RDS(ON). 175°C maximum junction temperature rating. _______________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VGSS ID Parameter Drain-Sour.

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Published: May 12, 2005 |