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NDB603AL

N-Channel MOSFET

NDB603AL Features

* 25A, 30V. RDS(ON) = 0.022Ω @ VGS=10V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High density cell design for extremely low RDS(ON). 175°C maximum junction temperatur

NDB603AL General Description

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage app.

NDB603AL Datasheet (65.70 KB)

Preview of NDB603AL PDF

Datasheet Details

Part number:

NDB603AL

Manufacturer:

Fairchild

File Size:

65.70 KB

Description:

N-channel mosfet.

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NDB603AL N-Channel MOSFET Fairchild

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