NDB603AL Datasheet (Fairchild)

NDB603AL, N-Channel MOSFET

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage app

NDB603AL Features

* 25A, 30V. RDS(ON) = 0.022Ω @ VGS=10V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High density cell design for extremely low RDS(ON). 175°C maximum junction temperatur