Datasheet4U Logo Datasheet4U.com

NDB6030 N-Channel MOSFET

📥 Download Datasheet Datasheet Preview Page 1

Description

July 1997 NDP6030 / NDB6030 N-Channel Enhancement Mode Field Effect Transistor General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

📥 Download Datasheet

Preview of NDB6030 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Features

* 46 A, 30 V. RDS(ON) = 0.018 @ VGS=10 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely l

NDB6030 Distributors

📁 Related Datasheet

  • NDB6020P - P-Channel Logic Level Enhancement Mode Field Effect Transistor (ON Semiconductor)
  • NDB6060L - N-Channel FET (ON Semiconductor)
  • NDB16P - 1Gb (x16) - DDR2 Synchronous DRAM (Insignis)
  • NDB171 - Transient Voltage Suppressor Diode (AUK)
  • NDB301RA - Integrated Driver and MOSFET (NIKO-SEM)
  • NDB710A - N-Channel MOSFET (INCHANGE)

📌 All Tags

N-Channel MOSFET Fairchild
Fairchild NDB6030-like datasheet