NDB6030 Datasheet (Fairchild)

NDB6030, N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process has been especially tailored to minimize on-state resistance and provide superior switching performance.

These devices are pa

NDB6030 Features

* 46 A, 30 V. RDS(ON) = 0.018 @ VGS=10 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely l