NDP7061 Datasheet - Fairchild

NDP7061, N-Channel Enhancement Mode Field Effect Transistor

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

Features

* 64A, 60V. RDS(ON) = 0.016Ω @ VGS=10V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely low

NDP7061_FairchildSemiconductor.pdf