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NDP7061

N-Channel Enhancement Mode Field Effect Transistor

NDP7061 Features

* 64A, 60V. RDS(ON) = 0.016Ω @ VGS=10V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely low

NDP7061 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pul.

NDP7061 Datasheet (360.13 KB)

Preview of NDP7061 PDF

Datasheet Details

Part number:

NDP7061

Manufacturer:

Fairchild

File Size:

360.13 KB

Description:

N-channel enhancement mode field effect transistor.

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NDP7061 N-Channel Enhancement Mode Field Effect Transistor Fairchild

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