* 42 and 40A, 100V. RDS(ON) = 0.038 and 0.042Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 millio
NDP710AE
Fairchild
74.01 KB
N-channel enhancement mode field effect transistor.
May 1994
NDP710A / NDP710AE / NDP710B / NDP710BE NDB710A / NDB710AE / NDB710B / NDB710BE N-Channel Enhancement Mode Field Effect Transistor
General D.
📁 Related Datasheet
NDP710A N-Channel Enhancement Mode Field Effect Transistor (Fairchild)
NDP710B N-Channel Enhancement Mode Field Effect Transistor (Fairchild)
NDP710BE N-Channel Enhancement Mode Field Effect Transistor (Fairchild)
NDP7050 N-Channel Enhancement Mode Field Effect Transistor (Fairchild)
NDP7050L N-Channel Logic Level Enhancement Mode Field Effect Transistor (Fairchild)
NDP7051 N-Channel Enhancement Mode Field Effect Transistor (Fairchild)
NDP7051L N-Channel Logic Level Enhancement Mode Field Effect Transistor (Fairchild)
NDP7052 N-Channel Enhancement Mode Field Effect Transistor (Fairchild)
NDP7052L N-Channel Logic Level Enhancement Mode Field Effect Transistor (Fairchild)
NDP7060 N-Channel Enhancement Mode Field Effect Transistor (Fairchild)
