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NDP710B Datasheet - Fairchild

NDP710B, N-Channel Enhancement Mode Field Effect Transistor

These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
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Features

* 42 and 40A, 100V. RDS(ON) = 0.038 and 0.042Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 millio

NDP710B_FairchildSemiconductor.pdf

Preview of NDP710B PDF

Datasheet Details

Part number:

NDP710B

Manufacturer:

Fairchild

File Size:

74.01 KB

Description:

N-channel enhancement mode field effect transistor

NDP710B Distributors

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