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28N15 FQA28N15

28N15 Description

FQA28N15 * N-Channel QFET® MOSFET FQA28N15 N-Channel QFET® MOSFET 150 V, 33 A, 90 mΩ June 2014 .
Features This N-Channel enhancement mode power MOSFET is. 33 A, 150 V, RDS(on) = 90 mΩ (Max.

28N15 Features

* This N-Channel enhancement mode power MOSFET is
* 33 A, 150 V, RDS(on) = 90 mΩ (Max. ) @ VGS = 10 V, produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET ID = 16.5 A technology has been especially tailored to reduce on-state

28N15 Applications

* 175°C Maximum Junction Temperature Rating D G DS TO-3PN Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Cur

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FQA28N15 Fairchild Semiconductor
Fairchild Semiconductor 28N15-like datasheet