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F12N10L N-Channel Logic Level Power MOSFET

F12N10L Description

Data Sheet RFP12N10L October 2013 N-Channel Logic Level Power MOSFET 100 V, 12 A, 200 mΩ These are N-Channel enhancement mode silicon gate power fie.

F12N10L Features

* 12A, 100V
* rDS(ON) = 0.200Ω
* Design Optimized for 5V Gate Drives
* Can be Driven Directly from QMOS, NMOS, TTL Circuits
* Compatible with Automotive Drive Requirements
* SOA is Power-Dissipation Limited
* Nanosecond Switching Speeds

F12N10L Applications

* such as programmable controllers, automotive switching and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supp

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Datasheet Details

Part number
F12N10L
Manufacturer
Fairchild Semiconductor
File Size
414.31 KB
Datasheet
F12N10L-FairchildSemiconductor.pdf
Description
N-Channel Logic Level Power MOSFET

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N-Channel Logic Level Power MOSFET Fairchild Semiconductor
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