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FCA36N60NF N-Channel MOSFET

FCA36N60NF Description

FCA36N60NF * N-Channel SupreMOS® FRFET® MOSFET FCA36N60NF N-Channel SupreMOS® FRFET® MOSFET 600 V, 34.9 A, 95 mΩ May 2014 .
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling proce.

FCA36N60NF Features

* RDS(on) = 80 mΩ (Typ. ) @ VGS = 10V, ID = 18 A
* Ultra Low Gate Charge (Typ. Qg = 86 nC)
* Low Effective Output Capacitance (Typ. Coss(eff. ) = 338 pF)
* 100% Avalanche Tested

FCA36N60NF Applications

* such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SupreMOS FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability. D G D S TO-3PN G S MOSFET Maximum Ratings TC = 25oC unless oth

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N-Channel MOSFET Fairchild Semiconductor
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