Datasheet Details
- Part number
- FDMA1430JP
- Manufacturer
- Fairchild Semiconductor
- File Size
- 356.65 KB
- Datasheet
- FDMA1430JP-FairchildSemiconductor.pdf
- Description
- -30V -2.9A Integrated P-Channel MOSFET and BJT
FDMA1430JP Description
FDMA1430JP Integrated P-Channel PowerTrench® MOSFET and BJT FDMA1430JP Integrated P-Channel PowerTrench® MOSFET and BJT -30 V, -2.9 A, 90 mΩ July 20.
This device is designed specifically as a single package solution for loadswitching in cellular handset and other ultra-portable applications.
FDMA1430JP Features
* Max rDS(on) = 90 mΩ at VGS = -4.5 V, ID = -2.9 A
* Max rDS(on) = 130 mΩ at VGS = -2.5 V, ID = -2.6 A
* Max rDS(on) = 170 mΩ at VGS = -1.8 V, ID = -1.7 A
* Max rDS(on) = 240 mΩ at VGS = -1.5 V, ID = -1 A
* Low profile - 0.8 mm maximum - in the new package
Mic
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