Datasheet Details
| Part number | FDMT80060DC |
|---|---|
| Manufacturer | Fairchild ↗ Semiconductor |
| File Size | 416.82 KB |
| Description | MOSFET |
| Datasheet |
 FDMT80060DC-FairchildSemiconductor.pdf
|
| Part number | FDMT80060DC |
|---|---|
| Manufacturer | Fairchild ↗ Semiconductor |
| File Size | 416.82 KB |
| Description | MOSFET |
| Datasheet |
FDMT80060DC-FairchildSemiconductor.pdf
|
Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 43 A Max rDS(on) = 1.3 mΩ at VGS = 8 V, ID = 37 A Advanced Package and Silicon combination for low rDS(on) and high efficiency Next generation enhanced body diode technology, engineered for soft recovery Low profile 8x8mm MLP package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process.Advancements in both silicon and Dual CoolTM package technologies have been
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