FGD3N60LSD - IGBT

Fairchild Semiconductor

FGD3N60LSD Datasheet Preview — Preview of FGD3N60LSD PDF

Datasheet Details

Part number	FGD3N60LSD
Manufacturer	Fairchild ↗ Semiconductor
File Size	761.90 KB
Description	IGBT
Datasheet	FGD3N60LSD_FairchildSemiconductor.pdf

FGD3N60LSD Product details

Description

Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. HID Lamp Applications Piezo Fuel Injection Applications C C G G E D-PAK E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF I FM PD TJ Tstg TL Notes : (1) Repetitive rating : Pulse width limited by max.junction temperature Description Collector-Emitter Voltage Gate-Em

Features

High Current Capability.
Very Low Saturation Voltage : VCE(sat) = 1.2 V @ IC = 3A.
High Input Impedance tm.

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Published: May 6, 2007 |