FQPF5N40 - 400V N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

3.0 A, 400 V, RDS(on) = 1.6 Ω (Max. ) @ VGS = 10 V, ID = 1.5 A.
Low Gate Charge (Typ. 10 nC).
Low Crss (Typ. 7 pF).
100% Avalanche Tested D GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy.

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