Datasheet4U Logo Datasheet4U.com

IRFI620A - Power MOSFET

IRFI620A Description

Advanced Power MOSFET IRFW/I620A .

IRFI620A Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max. ) @ VDS = 200V Low RDS(ON) : 0.626 Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Chara

📥 Download Datasheet

Preview of IRFI620A PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • IRFI620G - Power MOSFET (International Rectifier)
  • IRFI624G - Power MOSFET (International Rectifier)
  • IRFI624GPBF - Power MOSFET (International Rectifier)
  • IRFI610A - Power MOSFET (Samsung)
  • IRFI614G - Power MOSFET (International Rectifier)
  • IRFI614GPBF - Power MOSFET (International Rectifier)
  • IRFI630 - Power MOSFET (International Rectifier)
  • IRFI630A - Power MOSFET (Samsung)

📌 All Tags

Power MOSFET Fairchild Semiconductor
Fairchild Semiconductor IRFI620A-like datasheet