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LMA110 - .5-6 GHz MESFET Amplifier

Datasheet Summary

Description

The Filtronic LMA110A is a GaAs monolithic distributive amplifier which operates from 0.5 to 6 GHz.

This amplifier produces a typical gain of 23dB with a noise figure of 2.7dB.

The LMA110A is suitable for wide-band low noise gain block, EW and commercial PCN applications.

Features

  • 2.7dB Typical Noise Figure 23dB Typical Gain 12dBm Saturated Output Power 12dB Input/Output Return Loss Typical 0.5-6GHz Frequency Bandwidth +8.5 Volts Dual Bias Supply DC Decoupled RF Input and Output Chip Size : 1.62mmX1.62mm (.064”X.064”) Chip Thickness : 100µm 2 Pad Dimension : 100µm .5-6 GHz MESFET Amplifier LMA110A.

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Datasheet Details

Part number LMA110
Manufacturer Filtronic Compound Semiconductors
File Size 80.91 KB
Description .5-6 GHz MESFET Amplifier
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Filtronic Solid State Features • • • • • • • • • • 2.7dB Typical Noise Figure 23dB Typical Gain 12dBm Saturated Output Power 12dB Input/Output Return Loss Typical 0.5-6GHz Frequency Bandwidth +8.5 Volts Dual Bias Supply DC Decoupled RF Input and Output Chip Size : 1.62mmX1.62mm (.064”X.064”) Chip Thickness : 100µm 2 Pad Dimension : 100µm .5-6 GHz MESFET Amplifier LMA110A Description The Filtronic LMA110A is a GaAs monolithic distributive amplifier which operates from 0.5 to 6 GHz. This amplifier produces a typical gain of 23dB with a noise figure of 2.7dB. The LMA110A is suitable for wide-band low noise gain block, EW and commercial PCN applications. DC decoupled input and output RF port. Ground is provided to the circuitry through vias to the backside metallization.
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