LPD200 Datasheet (Filtronic Compound Semiconductors)

LPD200, HIGH PERFORMANCE PHEMT

AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide ( AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 200 µ m Schottky barrier gate.

The recessed “mushroom” gate structure minimizes parasitic

LPD200 Features

* 21 dBm Output Power at 1-dB Compression at 18 GHz

* 12 dB Power Gain at 18 GHz

* 1.0 dB Noise Figure at 18 GHz

* 55% Power-Added Efficiency LPD200 GATE BOND PAD (2X) DRAIN BOND PAD (2X) SOURCE BOND PAD (2x) DIE SIZE: 12.6X10.2mils (320x260 µm) DIE THICKNESS: 3.9