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LPD200

HIGH PERFORMANCE PHEMT

LPD200 Features

* 21 dBm Output Power at 1-dB Compression at 18 GHz

* 12 dB Power Gain at 18 GHz

* 1.0 dB Noise Figure at 18 GHz

* 55% Power-Added Efficiency LPD200 GATE BOND PAD (2X) DRAIN BOND PAD (2X) SOURCE BOND PAD (2x) DIE SIZE: 12.6X10.2mils (320x260 µm) DIE THICKNESS: 3.9

LPD200 General Description

AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide ( AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 200 µ m Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic.

LPD200 Datasheet (30.41 KB)

Preview of LPD200 PDF

Datasheet Details

Part number:

LPD200

Manufacturer:

Filtronic Compound Semiconductors

File Size:

30.41 KB

Description:

High performance phemt.

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TAGS

LPD200 HIGH PERFORMANCE PHEMT Filtronic Compound Semiconductors

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