LPD200 Datasheet, Phemt, Filtronic Compound Semiconductors

LPD200 Features

• Phemt
• 21 dBm Output Power at 1-dB Compression at 18 GHz
• 12 dB Power Gain at 18 GHz
• 1.0 dB Noise Figure at 18 GHz
• 55% Power-Added Efficiency LPD200 GA

PDF File Details

Part number:

LPD200

Manufacturer:

Filtronic Compound Semiconductors

File Size:

30.41kb

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📄 Datasheet

Description:

High performance phemt. AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide ( AlGaAs/InGaAs) Pseudomorphic High Electron Mo

LPD200 Application

• Applications The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide ( AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (

TAGS

LPD200

Filtronic Compound Semiconductors

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