Datasheet Details
Part number:
LPD200MX
Manufacturer:
Filtronic Compound Semiconductors
File Size:
68.94 KB
Description:
High performance phemt.
LPD200MX_FiltronicCompoundSemiconductors.pdf
Datasheet Details
Part number:
LPD200MX
Manufacturer:
Filtronic Compound Semiconductors
File Size:
68.94 KB
Description:
High performance phemt.
LPD200MX, HIGH PERFORMANCE PHEMT
AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 200 µm Schottky barrier gate.
The recessed “mushroom” Ti/Pt/Au gate structure minimizes par
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