LPD200MX Datasheet - Filtronic Compound Semiconductors

LPD200MX HIGH PERFORMANCE PHEMT

AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 200 µm Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure minimizes par.

LPD200MX Datasheet (68.94 KB)

LPD200MX Datasheet Preview — Preview of LPD200MX PDF

Datasheet Details

Part number:

LPD200MX

Manufacturer:

Filtronic Compound Semiconductors

File Size:

68.94 KB

Description:

High performance phemt.

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LPD200MX HIGH PERFORMANCE PHEMT Filtronic Compound Semiconductors

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