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LPD200MX

HIGH PERFORMANCE PHEMT

LPD200MX Features

* 1.0 dB Noise Figure at 1.8 GHz

* 15.5 dBm P-1dB 1.8 GHz, 17dBm@6GHz, 10.5dBm@12GHz

* 19 dB Power Gain at 1.8 GHz, 10dB@6GHz, 8dB@12GHz

* 31 dBm IP3 at 1.8 GHz

* 60% Power-Added-Efficiency LPD200MX

* DESCRIPTION AND APPLICATIONS The LPD200 is an Al

LPD200MX General Description

AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 200 µm Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure minimizes par.

LPD200MX Datasheet (68.94 KB)

Preview of LPD200MX PDF

Datasheet Details

Part number:

LPD200MX

Manufacturer:

Filtronic Compound Semiconductors

File Size:

68.94 KB

Description:

High performance phemt.

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TAGS

LPD200MX HIGH PERFORMANCE PHEMT Filtronic Compound Semiconductors

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