LPD200MX Datasheet, Phemt, Filtronic Compound Semiconductors

LPD200MX Features

• Phemt
• 1.0 dB Noise Figure at 1.8 GHz
• 15.5 dBm P-1dB 1.8 GHz, 17dBm@6GHz, 10.5dBm@12GHz
• 19 dB Power Gain at 1.8 GHz, 10dB@6GHz, 8dB@12GHz
• 31 dBm IP3 at

PDF File Details

Part number:

LPD200MX

Manufacturer:

Filtronic Compound Semiconductors

File Size:

68.94kb

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📄 Datasheet

Description:

High performance phemt. AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mob

LPD200MX Application

• Applications The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (P

TAGS

LPD200MX

Filtronic Compound Semiconductors

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