LPD200SOT343 - PACKAGED HIGH DYNAMIC RANGE PHEMT

Filtronic Compound Semiconductors

The LPD200SOT343 by Filtronic Compound Semiconductors is a PACKAGED HIGH DYNAMIC RANGE PHEMT. Below is the official datasheet preview.

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LPD200SOT343 PACKAGED HIGH DYNAMIC RANGE PHEMT by Filtronic Compound Semiconductors - Datasheet Preview — Official preview page of the **LPD200SOT343** PACKAGED HIGH DYNAMIC RANGE PHEMT datasheet (Filtronic Compound Semiconductors).

Datasheet Details

Part number	LPD200SOT343
Manufacturer	Filtronic Compound Semiconductors
File Size	68.03 KB
Description	PACKAGED HIGH DYNAMIC RANGE PHEMT
Datasheet	LPD200SOT343_FiltronicCompoundSemiconductors.pdf
Additional preview pages of the LPD200SOT343 datasheet.

LPD200SOT343 Product details

Description

AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 200 µm Schottky barrier gate.

Features

S.
0.6 dB Noise Figure at 2 GHz.
15.5 dBm P-1dB 2 GHz, 16.5 dBm at 6 GHz.
21 dB Power Gain at 2 GHz, 10.5 dB at 6GHz.
50% Power-Added-Efficiency at 2 GHz.

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Published: Mar 22, 2005 |