Datasheet Details
Part number:
LPD200SOT343
Manufacturer:
Filtronic Compound Semiconductors
File Size:
68.03 KB
Description:
Packaged high dynamic range phemt.
LPD200SOT343_FiltronicCompoundSemiconductors.pdf
LPD200SOT343_FiltronicCompoundSemiconductors.pdf
Datasheet Details
Part number:
LPD200SOT343
Manufacturer:
Filtronic Compound Semiconductors
File Size:
68.03 KB
Description:
Packaged high dynamic range phemt.
LPD200SOT343, PACKAGED HIGH DYNAMIC RANGE PHEMT
AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 200 µm Schottky barrier gate.
The recessed “mushroom” Ti/Pt/Au gate structure minimizes par
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