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LPD200SOT343 PACKAGED HIGH DYNAMIC RANGE PHEMT

LPD200SOT343 Description

PRELIMINARY DATA SHEET LPD200SOT343 PACKAGED HIGH DYNAMIC RANGE PHEMT * .
AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor.

LPD200SOT343 Features

* 0.6 dB Noise Figure at 2 GHz
* 15.5 dBm P-1dB 2 GHz, 16.5 dBm at 6 GHz
* 21 dB Power Gain at 2 GHz, 10.5 dB at 6GHz
* 50% Power-Added-Efficiency at 2 GHz

LPD200SOT343 Applications

* The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 200 µm Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure minimizes parasitic gate-sourc

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PACKAGED HIGH DYNAMIC RANGE PHEMT Filtronic Compound Semiconductors
Filtronic Compound Semiconductors LPD200SOT343-like datasheet