Datasheet4U Logo Datasheet4U.com

LPD200SOT343

PACKAGED HIGH DYNAMIC RANGE PHEMT

LPD200SOT343 Features

* 0.6 dB Noise Figure at 2 GHz

* 15.5 dBm P-1dB 2 GHz, 16.5 dBm at 6 GHz

* 21 dB Power Gain at 2 GHz, 10.5 dB at 6GHz

* 50% Power-Added-Efficiency at 2 GHz

* DESCRIPTION AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (A

LPD200SOT343 General Description

AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 200 µm Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure minimizes par.

LPD200SOT343 Datasheet (68.03 KB)

Preview of LPD200SOT343 PDF

Datasheet Details

Part number:

LPD200SOT343

Manufacturer:

Filtronic Compound Semiconductors

File Size:

68.03 KB

Description:

Packaged high dynamic range phemt.

📁 Related Datasheet

LPD200 HIGH PERFORMANCE PHEMT (Filtronic Compound Semiconductors)

LPD200MX HIGH PERFORMANCE PHEMT (Filtronic Compound Semiconductors)

LPD200P70 PACKAGED HIGH DYNAMIC RANGE PHEMT (Filtronic Compound Semiconductors)

LPD25 Low Pressure Drop Heat Sink (ALPHA)

LPD25-10B Low Pressure Drop Heat Sink (ALPHA)

LPD25-15B Low Pressure Drop Heat Sink (ALPHA)

LPD25-20B Low Pressure Drop Heat Sink (ALPHA)

LPD25-25B Low Pressure Drop Heat Sink (ALPHA)

LPD25-3B Low Pressure Drop Heat Sink (ALPHA)

LPD25-4B Low Pressure Drop Heat Sink (ALPHA)

TAGS

LPD200SOT343 PACKAGED HIGH DYNAMIC RANGE PHEMT Filtronic Compound Semiconductors

Image Gallery

LPD200SOT343 Datasheet Preview Page 2

LPD200SOT343 Distributor