Datasheet Specifications
- Part number
- LPD200SOT343
- Manufacturer
- Filtronic Compound Semiconductors
- File Size
- 68.03 KB
- Datasheet
- LPD200SOT343_FiltronicCompoundSemiconductors.pdf
- Description
- PACKAGED HIGH DYNAMIC RANGE PHEMT
Description
PRELIMINARY DATA SHEET LPD200SOT343 PACKAGED HIGH DYNAMIC RANGE PHEMT * .Features
* 0.6 dB Noise Figure at 2 GHzApplications
* The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 200 µm Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure minimizes parasitic gate-sourcLPD200SOT343 Distributors
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