LPD200SOT343 Datasheet, PHEMT, Filtronic Compound Semiconductors

LPD200SOT343 Features

• Phemt
• 0.6 dB Noise Figure at 2 GHz
• 15.5 dBm P-1dB 2 GHz, 16.5 dBm at 6 GHz
• 21 dB Power Gain at 2 GHz, 10.5 dB at 6GHz
• 50% Power-Added-Efficiency at 2 G

PDF File Details

Part number:

LPD200SOT343

Manufacturer:

Filtronic Compound Semiconductors

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68.03kb

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📄 Datasheet

Description:

Packaged high dynamic range phemt. AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mob

LPD200SOT343 Application

• Applications The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (P

TAGS

LPD200SOT343

Filtronic Compound Semiconductors

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