Datasheet Details
Part number:
LPD200P70
Manufacturer:
Filtronic Compound Semiconductors
File Size:
61.03 KB
Description:
Packaged high dynamic range phemt.
LPD200P70_FiltronicCompoundSemiconductors.pdf
LPD200P70_FiltronicCompoundSemiconductors.pdf
Datasheet Details
Part number:
LPD200P70
Manufacturer:
Filtronic Compound Semiconductors
File Size:
61.03 KB
Description:
Packaged high dynamic range phemt.
LPD200P70, PACKAGED HIGH DYNAMIC RANGE PHEMT
AND APPLICATIONS The LPD200P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µ m by 200 µ m Schottky barrier gate.
The recessed “mushroom” Ti/Pt/Au gate structure
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