LPD200P70 PACKAGED HIGH DYNAMIC RANGE PHEMT

Filtronic Compound Semiconductors

Description

PACKAGED HIGH DYNAMIC RANGE PHEMT * .
AND APPLICATIONS The LPD200P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility.

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LPD200P70 Datasheet Preview — Preview of LPD200P70 PDF

Datasheet Specifications

Part number: LPD200P70
Manufacturer: Filtronic Compound Semiconductors
File Size: 61.03 KB
Datasheet: LPD200P70_FiltronicCompoundSemiconductors.pdf
Description: PACKAGED HIGH DYNAMIC RANGE PHEMT

Features

* 20 dBm Output Power at 1-dB Compression at 18 GHz
* 9.5 dB Power Gain at 18 GHz
* 16 dB Small Signal Gain at 2 GHz
* 0.8 dB Noise Figure at 2 GHz LPD200P70

Applications

* The LPD200P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µ m by 200 µ m Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure minimizes parasi

LPD200P70 Distributors

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LPD200P70 PACKAGED HIGH DYNAMIC RANGE PHEMT Filtronic Compound Semiconductors

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