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LPD200P70

PACKAGED HIGH DYNAMIC RANGE PHEMT

LPD200P70 Features

* 20 dBm Output Power at 1-dB Compression at 18 GHz

* 9.5 dB Power Gain at 18 GHz

* 16 dB Small Signal Gain at 2 GHz

* 0.8 dB Noise Figure at 2 GHz LPD200P70

* DESCRIPTION AND APPLICATIONS The LPD200P70 is a packaged Aluminum Gallium Arsenide / Indium Galli

LPD200P70 General Description

AND APPLICATIONS The LPD200P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µ m by 200 µ m Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure.

LPD200P70 Datasheet (61.03 KB)

Preview of LPD200P70 PDF

Datasheet Details

Part number:

LPD200P70

Manufacturer:

Filtronic Compound Semiconductors

File Size:

61.03 KB

Description:

Packaged high dynamic range phemt.

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TAGS

LPD200P70 PACKAGED HIGH DYNAMIC RANGE PHEMT Filtronic Compound Semiconductors

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