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LPV1500 - PACKAGED LOW NOISE PHEMT

LPV1500 Description

Filtronic Solid State .
AND APPLICATIONS The LPV1500 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor.

LPV1500 Features

* LPV1500 1 W Power PHEMT DRAIN DRAIN
* +31.5 dBm Typical Power at 18 GHz 8.5 dB Typical Power Gain at 18 GHz +27 dBm at 3.3V Battery Voltage +45 dBm Typical Intercept Point 50% Power-Added-Efficiency at 18 GHz Plated Source Thru-Vias SOURCE

LPV1500 Applications

* The LPV1500 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 1500 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and

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PACKAGED LOW NOISE PHEMT Filtronic Compound Semiconductors
Filtronic Compound Semiconductors LPV1500-like datasheet