Datasheet4U Logo Datasheet4U.com

MMA20312BVT1

Heterojunction Bipolar Transistor

MMA20312BVT1 Features

* Frequency: 1800

* 2200 MHz

* P1dB: 30.5 dBm @ 2140 MHz (CW Application Circuit)

* Power Gain: 26.4 dB @ 2140 MHz (CW Application Circuit)

* OIP3: 44.5 dBm @ 2140 MHz (W

* CDMA Application Circuit)

* Active Bias Control (adjustable externally)

* Single 3 to 5 V S

MMA20312BVT1 General Description

Part Number Manufacturer C1, C5 22 pF Chip Capacitors 06033J220GBS AVX C2 1.8 pF Chip Capacitor 06035J1R8BBS AVX C3 2.2 pF Chip Capacitor 06035J2R2BBS AVX C4 5.6 pF Chip Capacitor 06035J5R6BBS AVX C6, C7, C9 Components Not Placed C8, C18 1 F Chip Capacitors GRM188R61A105KA61 .

MMA20312BVT1 Datasheet (826.00 KB)

Preview of MMA20312BVT1 PDF

Datasheet Details

Part number:

MMA20312BVT1

Manufacturer:

Freescale Semiconductor

File Size:

826.00 KB

Description:

Heterojunction bipolar transistor.
Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMA20312BV is.

📁 Related Datasheet

MMA20312BT1 Heterojunction Bipolar Transistor (Freescale Semiconductor)

MMA2200W Sensor (Motorola)

MMA2201 Micromachined Accelerometer (Freescale Semiconductor)

MMA2201D Micromachined Accelerometer (Motorola)

MMA2201KEG Low G Micromachined Accelerometer (Freescale Semiconductor)

MMA2202D Micromachined Accelerometer (Motorola)

MMA2202KEG Micromachined Accelerometer (Freescale Semiconductor)

MMA2204D Surface Mount Micromachined Accelerometer (Freescale Semiconductor)

MMA2244EG Low G Micromachined Accelerometer (Freescale Semiconductor)

MMA2260 Axis Micromachined Accelerometer (Freescale Semiconductor)

TAGS

MMA20312BVT1 Heterojunction Bipolar Transistor Freescale Semiconductor

Image Gallery

MMA20312BVT1 Datasheet Preview Page 2 MMA20312BVT1 Datasheet Preview Page 3

MMA20312BVT1 Distributor