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MMG3012NT1 Heterojunction Bipolar Transistor

MMG3012NT1 Description

Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3012NT1 is a.
Pin Number Pin Function 1 RFin 2 Ground 3 RFout/DC Supply Table 6.

MMG3012NT1 Features

* Frequency: 0
* 6000 MHz
* P1dB: 18.5 dBm @ 900 MHz
* Small
* Signal Gain: 19 dB @ 900 MHz
* Third Order Output Intercept Point: 34 dBm @ 900 MHz
* Single 5 V Supply
* Internally Matched to 50 Ohms
* Cost
* effective SOT
* 89 Surface Mount Plastic

MMG3012NT1 Applications

* It is suitable for applications with frequencies from 0 to 6000 MHz such as cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small

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Datasheet Details

Part number
MMG3012NT1
Manufacturer
Freescale Semiconductor
File Size
362.18 KB
Datasheet
MMG3012NT1-FreescaleSemiconductor.pdf
Description
Heterojunction Bipolar Transistor

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