MMG3012NT1 Datasheet (Freescale Semiconductor) - Heterojunction Bipolar Transistor

MMG3012NT1, Heterojunction Bipolar Transistor

Pin Number Pin Function 1 RFin 2 Ground 3 RFout/DC Supply Table 6.

ESD Protection Characteristics Test Methodology Human Body Model (per JESD 22 *A114) Machine Model (per EIA/JESD 22 *A115) Charge Device Model (per JESD 22 *C101) Table 7.

Moisture Sensitivity Level Test Met

Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3012NT1 is a general purpose amplifier that is internally input matched and internally output matched.

It is designed for a broad range of Class A, small signal, high linearity, general purpose applications.

It is suitable for applications with frequencies from 0 to 6000 MHz such as cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small

MMG3012NT1 Features

* Frequency: 0

* 6000 MHz

* P1dB: 18.5 dBm @ 900 MHz

* Small

* Signal Gain: 19 dB @ 900 MHz

* Third Order Output Intercept Point: 34 dBm @ 900 MHz

* Single 5 V Supply

* Internally Matched to 50 Ohms

* Cost

* effective SOT

* 89 Surface Mount Plastic