MMG3012NT1 Heterojunction Bipolar Transistor

Freescale Semiconductor

Description

Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3012NT1 is a.
Pin Number Pin Function 1 RFin 2 Ground 3 RFout/DC Supply Table 6.

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Datasheet Specifications

Part number: MMG3012NT1
Manufacturer: Freescale Semiconductor
File Size: 362.18 KB
Datasheet: MMG3012NT1-FreescaleSemiconductor.pdf
Description: Heterojunction Bipolar Transistor

Features

* Frequency: 0
* 6000 MHz
* P1dB: 18.5 dBm @ 900 MHz
* Small
* Signal Gain: 19 dB @ 900 MHz
* Third Order Output Intercept Point: 34 dBm @ 900 MHz
* Single 5 V Supply
* Internally Matched to 50 Ohms
* Cost
* effective SOT
* 89 Surface Mount Plastic

Applications

* It is suitable for applications with frequencies from 0 to 6000 MHz such as cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small

MMG3012NT1 Distributors

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MMG3012NT1 Heterojunction Bipolar Transistor Freescale Semiconductor

Freescale Semiconductor MMG3012NT1-like datasheet