MMG3015NT1 Datasheet (Freescale Semiconductor) - Heterojunction Bipolar Transistor

MMG3015NT1, Heterojunction Bipolar Transistor

Pin Number Pin Function 1 RFin 2 Ground 3 RFout/DC Supply 2 123 Figure 1.

Functional Diagram Table 6.

ESD Protection Characteristics Test Methodology Human Body Model (per JESD 22 *A114) Machine Model (per EIA/JESD 22 *A115) Charge Device Model (per JESD 22 *C101) Tabl

MMG3015NT1 Features

* Frequency: 0

* 6000 MHz

* P1dB: 20.5 dBm @ 900 MHz

* Small

* Signal Gain: 15.5 dB @ 900 MHz

* Third Order Output Intercept Point: 36 dBm @ 900 MHz

* Single 5 V Supply

* Active Bias Control

* Internally Matched to 50 Ohms

* Cost

* effective SOT