MMG3001NT1 - Heterojunction Bipolar Transistor

Product Overview

Freescale Semiconductor

Datasheet Details

Part number	MMG3001NT1
Manufacturer	Freescale Semiconductor
File Size	378.28 KB
Description	Heterojunction Bipolar Transistor
Datasheet	MMG3001NT1 Datasheet
Additional preview pages of the MMG3001NT1 datasheet.

Product details

Description

Pin Number Pin Function 1 RFin 2 Ground 3 RFout/DC Supply 2 123 Figure 1. Functional Diagram Table 6. ESD Protection Characteristics Test Conditions/Test Methodology Human Body Model (per JESD 22--A114) Machine Model (per EIA/JESD 22--A115) Charge Device Model (per JESD 22--C101) Table 7. Moisture Sensitivity Level Test Methodology Per JESD 22--A113, IPC/JEDEC J--STD--020 Rating 1 Class 0 A IV Package Peak Temperature 260 Unit C MMG3001NT1 2 RF Device Data Freescale Semiconductor, In

Features

Frequency: 40--3600 MHz.
P1dB: 18.5 dBm @ 900 MHz.
Small--Signal Gain: 20 dB @ 900 MHz.
Third Order Output Intercept Point: 32 dBm @ 900 MHz.
Single Voltage Supply.
Internally Matched to 50 Ohms.
Cost--effective SOT--89 Surface Mount Plastic Package.
In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. Document Number: MMG3001NT1 Rev. 9, 10/2014 MMG3001NT1 40--3600 MHz, 20 dB 18.5 dBm InGaP HBT GPA 12 3 SOT--89 Table 1. Typical Per.

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Published: Jun 20, 2016 |