Datasheet Details
- Part number
- MMG3006NT1
- Manufacturer
- Freescale Semiconductor
- File Size
- 473.10 KB
- Datasheet
- MMG3006NT1-FreescaleSemiconductor.pdf
- Description
- Heterojunction Bipolar Transistor
MMG3006NT1 Description
NXP Semiconductors Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3006NT1 is a gene.
Name
Pin Number
Description
VBA RFin
1 2, 3, 4
Bias voltage supply.
coupled and require.
MMG3006NT1 Features
* Frequency: 400
* 2400 MHz
* P1dB: 33 dBm @ 900 MHz
* Small
* signal gain: 17.5 dB @ 900 MHz
* Third order output intercept point: 49 dBm @ 900 MHz
* Single 5 V supply
* Internally input prematched to 50 ohms
Document Number: MMG3006NT1 Rev. 6, 12/2017
MMG3006NT
MMG3006NT1 Applications
* It is suitable for applications with frequencies from 400 to 2400 MHz such as cellular, PCS, WLL, PHS, VHF, UHF, UMTS and general small
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