MMG3006NT1 - Heterojunction Bipolar Transistor

Product Overview

Freescale Semiconductor

Datasheet Details

Part number	MMG3006NT1
Manufacturer	Freescale Semiconductor
File Size	473.10 KB
Description	Heterojunction Bipolar Transistor
Datasheet	MMG3006NT1 Datasheet
Additional preview pages of the MMG3006NT1 datasheet.

Product details

Description

Name Pin Number Description VBA RFin 1 2, 3, 4 Bias voltage supply.RF input for the power amplifier.This pin is DC--coupled and requires a DC--blocking series capacitor.RFout/ VCC VCC GND 9, 10, 11, 12 16 Backside Center Metal RF output for the power amplifier.This pin is DC--coupled and requires a DC--blocking series capacitor.Collector voltage supply.The center metal base of the QFN package provides both DC and RF ground as well as heat sink contact for the power amplifier.VCC

Features

Frequency: 400--2400 MHz.
P1dB: 33 dBm @ 900 MHz.
Small--signal gain: 17.5 dB @ 900 MHz.
Third order output intercept point: 49 dBm @ 900 MHz.
Single 5 V supply.
Internally input prematched to 50 ohms Document Number: MMG3006NT1 Rev. 6, 12/2017 MMG3006NT1 400--2400 MHz, 17.5 dB 33 dBm InGaP HBT GPA QFN 4  4--16L Table 1. Typical Performance (1) Characteristic 900 1960 2140 Symbol MHz MHz MHz Unit Small--Signal Gain (S21) Gp 17.5 14 14 dB Input Return Loss (.

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Published: Nov 28, 2014 |