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MMG3003NT1 Heterojunction Bipolar Transistor

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Description

Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3003NT1 is a.
Pin Number Pin Function 1 RFin 2 Ground 3 RFout/DC Supply Table 6.

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Datasheet Specifications

Part number
MMG3003NT1
Manufacturer
Freescale Semiconductor
File Size
634.82 KB
Datasheet
MMG3003NT1_FreescaleSemiconductor.pdf
Description
Heterojunction Bipolar Transistor

Features

* Frequency: 40
* 3600 MHz
* P1dB: 24 dBm @ 900 MHz
* Small
* Signal Gain: 20 dB @ 900 MHz
* Third Order Output Intercept Point: 40.5 dBm @ 900 MHz
* Single Voltage Supply
* Internally Matched to 50 Ohms
* Cost
* effective SOT
* 89 Surface Mount Pl

Applications

* It is suitable for applications with frequencies from 40 to 3600 MHz such as cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small

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