MMG3009NT1 - Heterojunction Bipolar Transistor

Freescale Semiconductor

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Datasheet Details

Part number	MMG3009NT1
Manufacturer	Freescale Semiconductor
File Size	408.30 KB
Description	Heterojunction Bipolar Transistor
Datasheet	MMG3009NT1_FreescaleSemiconductor.pdf

MMG3009NT1 Product details

Description

Pin Number Pin Function 1 RFin 2 Ground 3 RFout/DC Supply Table 6. ESD Protection Characteristics Test Methodology Human Body Model (per JESD 22--A114) Machine Model (per EIA/JESD 22--A115) Charge Device Model (per JESD 22--C101) Table 7. Moisture Sensitivity Level Test Methodology Per JESD 22--A113, IPC/JEDEC J--STD--020 2 123 Figure 1. Functional Diagram Class 1A A IV Rating Package Peak Temperature Unit 1 260 C MMG3009NT1 2 RF Device Data Freescale Semiconductor, Inc.LA

Features

Frequency: 0 to 6000 MHz.
P1dB: 18 dBm @ 900 MHz.
Small--Signal Gain: 15 dB @ 900 MHz.
Third Order Output Intercept Point: 34 dBm @ 900 MHz.
Single 5 V Supply.
Internally Matched to 50 Ohms.
Cost--effective SOT--89 Surface Mount Plastic Package.
In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. Document Number: MMG3009NT1 Rev. 7, 9/2014 MMG3009NT1 0--6000 MHz, 15 dB 18 dBm InGaP HBT GPA SOT--89 Table 1. Typical Performance (1).

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Published: Jan 27, 2007 |