MML09211HT1 Datasheet - Freescale Semiconductor

MML09211HT1 Enhancement Mode pHEMT

Pin Number Pin Function 1 RFin 2 RFin 3 RF Input Matching Termination 4 Bias Voltage DC Supply 5 RF Feedback 6 RFout/DC Supply 7 RFout/DC Supply 8 No Connection RFin RFin RFMATCH VBIAS 1 2 3 4 GND (Top View) 8 N.C. 7 RFout 6 RFout 5 FB Figure 1. Pin Connections Table 6. ESD Protection Ch.

Freescale Semiconductor Technical Data Document Number: MML09211H Rev. 1, 9/2014 Enhancement Mode pHEMT Technology (E pHEMT) Low Noise Amplifier The MML09211H is a single stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed for a range of low noise, high linearity applications such as pico cell, femto cell, tower mounted amplifiers (TMA) and receiver front end circuits. It operates from a single volt.

MML09211HT1 Features

* Ultra Low Noise Figure: 0.52 dB @ 900 MHz

* Frequency: 400

* 1400 MHz

* Unconditionally Stable over Temperature

* High Reverse Isolation:

* 35 dB @ 900 MHz

* P1dB: 22 dBm @ 900 MHz

* Small

* Signal Gain: 21.3 dB @ 900 MHz (adjustable externally)

* Thi

MML09211HT1 Datasheet (483.62 KB)

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Datasheet Details

Part number:

MML09211HT1

Manufacturer:

Freescale Semiconductor

File Size:

483.62 KB

Description:

Enhancement mode phemt.

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