MML09211HT1 - Enhancement Mode pHEMT
Pin Number Pin Function 1 RFin 2 RFin 3 RF Input Matching Termination 4 Bias Voltage DC Supply 5 RF Feedback 6 RFout/DC Supply 7 RFout/DC Supply 8 No Connection RFin RFin RFMATCH VBIAS 1 2 3 4 GND (Top View) 8 N.C.
7 RFout 6 RFout 5 FB Figure 1.
Pin Connections Table 6.
ESD Protection Ch
Freescale Semiconductor Technical Data Document Number: MML09211H Rev.
1, 9/2014 Enhancement Mode pHEMT Technology (E pHEMT) Low Noise Amplifier The MML09211H is a single stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications.
It is designed for a range of low noise, high linearity applications such as pico cell, femto cell, tower mounted amplifiers (TMA) and receiver front end circuits.
It operates from a single volt
MML09211HT1 Features
* Ultra Low Noise Figure: 0.52 dB @ 900 MHz
* Frequency: 400
* 1400 MHz
* Unconditionally Stable over Temperature
* High Reverse Isolation:
* 35 dB @ 900 MHz
* P1dB: 22 dBm @ 900 MHz
* Small
* Signal Gain: 21.3 dB @ 900 MHz (adjustable externally)
* Thi
