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MML09211HT1 Enhancement Mode pHEMT

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Description

Freescale Semiconductor Technical Data Document Number: MML09211H Rev.1, 9/2014 Enhancement Mode pHEMT Technology (E *pHEMT) Low Noise Ampli.
Pin Number Pin Function 1 RFin 2 RFin 3 RF Input Matching Termination 4 Bias Voltage DC Supply 5 RF Feedback 6 RFout/DC Supply 7 RFout/DC Supply.

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Features

* Ultra Low Noise Figure: 0.52 dB @ 900 MHz
* Frequency: 400
* 1400 MHz
* Unconditionally Stable over Temperature
* High Reverse Isolation:
* 35 dB @ 900 MHz
* P1dB: 22 dBm @ 900 MHz
* Small
* Signal Gain: 21.3 dB @ 900 MHz (adjustable externally)
* Thi

Applications

* It is designed for a range of low noise, high linearity applications such as pico cell, femto cell, tower mounted amplifiers (TMA) and receiver front end circuits. It operates from a single voltage supply and is suitable for applications with frequencies from 400 to 1400 MHz such as ISM, GSM, W

MML09211HT1 Distributors

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