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MML09212HT1 Datasheet - Freescale Semiconductor

MML09212HT1 - Enhancement Mode pHEMT

Part Number C1, C2, C7, C14 56 pF Chip Capacitors GRM1555C1H560JZ01 C3, C4 Components Not Placed C5 180 pF Chip Capacitor GRM1555C1H181JZ01 C6, C9, C10, C13 0.01 F Chip Capacitors GRM155R71E103KA01 C8 1000 pF Chip Capacitor GRM155R71E101KA01 C11, C12 100 pF Chip Capacitors GRM1555

Freescale Semiconductor Technical Data Document Number: MML09212H Rev.

2, 9/2014 Enhancement Mode pHEMT Technology (E pHEMT) Low Noise Amplifier The MML09212H is a 2 stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications.

It is designed for a range of low noise, high linearity applications such as picocell, femtocell, tower mounted amplifiers (TMA) and receiver front end circuits.

It operates from a single vol

MML09212HT1 Features

* Low Noise Figure: 0.52 dB @ 900 MHz

* Frequency: 400

* 1400 MHz

* Unconditionally Stable Over Temperature

* High Reverse Isolation:

* 58 dB @ 900 MHz

* P1dB: 22.8 dBm @ 900 MHz

* Small

* Signal Gain: 37.5 dB @ 900 MHz

* Third Order Output Intercept Po

MML09212HT1-FreescaleSemiconductor.pdf

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Datasheet Details

Part number:

MML09212HT1

Manufacturer:

Freescale Semiconductor

File Size:

771.44 KB

Description:

Enhancement mode phemt.

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