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MML09212HT1 Enhancement Mode pHEMT

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Description

Freescale Semiconductor Technical Data Document Number: MML09212H Rev.2, 9/2014 Enhancement Mode pHEMT Technology (E *pHEMT) Low Noise Ampli.
Part Number C1, C2, C7, C14 56 pF Chip Capacitors GRM1555C1H560JZ01 C3, C4 Components Not Placed C5 180 pF Chip Capacitor GRM1555C1H181JZ01.

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Features

* Low Noise Figure: 0.52 dB @ 900 MHz
* Frequency: 400
* 1400 MHz
* Unconditionally Stable Over Temperature
* High Reverse Isolation:
* 58 dB @ 900 MHz
* P1dB: 22.8 dBm @ 900 MHz
* Small
* Signal Gain: 37.5 dB @ 900 MHz
* Third Order Output Intercept Po

Applications

* It is designed for a range of low noise, high linearity applications such as picocell, femtocell, tower mounted amplifiers (TMA) and receiver front
* end circuits. It operates from a single voltage supply and is suitable for applications with frequencies from 400 to 1400 MHz such as ISM, GSM,

MML09212HT1 Distributors

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MML09212HT1 Enhancement Mode pHEMT Freescale Semiconductor
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