MML09212HT1 - Enhancement Mode pHEMT
Part Number C1, C2, C7, C14 56 pF Chip Capacitors GRM1555C1H560JZ01 C3, C4 Components Not Placed C5 180 pF Chip Capacitor GRM1555C1H181JZ01 C6, C9, C10, C13 0.01 F Chip Capacitors GRM155R71E103KA01 C8 1000 pF Chip Capacitor GRM155R71E101KA01 C11, C12 100 pF Chip Capacitors GRM1555
Freescale Semiconductor Technical Data Document Number: MML09212H Rev.
2, 9/2014 Enhancement Mode pHEMT Technology (E pHEMT) Low Noise Amplifier The MML09212H is a 2 stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications.
It is designed for a range of low noise, high linearity applications such as picocell, femtocell, tower mounted amplifiers (TMA) and receiver front end circuits.
It operates from a single vol
MML09212HT1 Features
* Low Noise Figure: 0.52 dB @ 900 MHz
* Frequency: 400
* 1400 MHz
* Unconditionally Stable Over Temperature
* High Reverse Isolation:
* 58 dB @ 900 MHz
* P1dB: 22.8 dBm @ 900 MHz
* Small
* Signal Gain: 37.5 dB @ 900 MHz
* Third Order Output Intercept Po
