MML09212HT1 Datasheet - Freescale Semiconductor

MML09212HT1 Enhancement Mode pHEMT

Part Number C1, C2, C7, C14 56 pF Chip Capacitors GRM1555C1H560JZ01 C3, C4 Components Not Placed C5 180 pF Chip Capacitor GRM1555C1H181JZ01 C6, C9, C10, C13 0.01 F Chip Capacitors GRM155R71E103KA01 C8 1000 pF Chip Capacitor GRM155R71E101KA01 C11, C12 100 pF Chip Capacitors GRM1555.

Freescale Semiconductor Technical Data Document Number: MML09212H Rev. 2, 9/2014 Enhancement Mode pHEMT Technology (E pHEMT) Low Noise Amplifier The MML09212H is a 2 stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed for a range of low noise, high linearity applications such as picocell, femtocell, tower mounted amplifiers (TMA) and receiver front end circuits. It operates from a single vol.

MML09212HT1 Features

* Low Noise Figure: 0.52 dB @ 900 MHz

* Frequency: 400

* 1400 MHz

* Unconditionally Stable Over Temperature

* High Reverse Isolation:

* 58 dB @ 900 MHz

* P1dB: 22.8 dBm @ 900 MHz

* Small

* Signal Gain: 37.5 dB @ 900 MHz

* Third Order Output Intercept Po

MML09212HT1 Datasheet (771.44 KB)

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Datasheet Details

Part number:

MML09212HT1

Manufacturer:

Freescale Semiconductor

File Size:

771.44 KB

Description:

Enhancement mode phemt.

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