MML20211HT1 Enhancement Mode pHEMT

Freescale Semiconductor

Description

Freescale Semiconductor Technical Data Document Number: MML20211H Rev.1, 9/2014 Enhancement Mode pHEMT Technology (E *pHEMT) Low Noise Ampli.
Pin Number Pin Function 1 RFin 2 RFin 3 RF Input Matching Termination 4 Bias Voltage DC Supply 5 RF Feedback 6 RFout/DC Supply 7 RFout/DC Supply.

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Datasheet Specifications

Part number: MML20211HT1
Manufacturer: Freescale Semiconductor
File Size: 497.72 KB
Datasheet: MML20211HT1-FreescaleSemiconductor.pdf
Description: Enhancement Mode pHEMT

Features

* Ultra Low Noise Figure: 0.65 dB @ 2140 MHz
* Frequency: 1400
* 2800 MHz
* High Reverse Isolation:
* 35 dB @ 2140 MHz
* P1dB: 21.3 dBm @ 2140 MHz
* Small
* Signal Gain: 18.6 dB @ 2140 MHz (adjustable externally)
* Third Order Output Intercept Point: 33 dBm

Applications

* It is designed for a range of low noise, high linearity applications such as pico cell, femto cell, tower mounted amplifiers (TMA) and receiver front end circuits. It operates from a single voltage supply and is suitable for applications with frequencies from 1400 to 2800 MHz such as TD
* SCD

MML20211HT1 Distributors

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