MML20211HT1 Datasheet (Freescale Semiconductor)

MML20211HT1, Enhancement Mode pHEMT

Pin Number Pin Function 1 RFin 2 RFin 3 RF Input Matching Termination 4 Bias Voltage DC Supply 5 RF Feedback 6 RFout/DC Supply 7 RFout/DC Supply 8 No Connection RFin RFin RFMATCH VBIAS 1 2 3 4 GND (Top View) 8 N.C.

7 RFout 6 RFout 5 FB Figure 1.

Pin Connections Table 6.

ESD Protection Ch

Freescale Semiconductor Technical Data Document Number: MML20211H Rev.

1, 9/2014 Enhancement Mode pHEMT Technology (E pHEMT) Low Noise Amplifier The MML20211H is a single stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications.

It is designed for a range of low noise, high linearity applications such as pico cell, femto cell, tower mounted amplifiers (TMA) and receiver front end circuits.

It operates from a single volt

MML20211HT1 Features

* Ultra Low Noise Figure: 0.65 dB @ 2140 MHz

* Frequency: 1400

* 2800 MHz

* High Reverse Isolation:

* 35 dB @ 2140 MHz

* P1dB: 21.3 dBm @ 2140 MHz

* Small

* Signal Gain: 18.6 dB @ 2140 MHz (adjustable externally)

* Third Order Output Intercept Point: 33 dBm