MML20211HT1 Datasheet - Freescale Semiconductor

MML20211HT1 Enhancement Mode pHEMT

Pin Number Pin Function 1 RFin 2 RFin 3 RF Input Matching Termination 4 Bias Voltage DC Supply 5 RF Feedback 6 RFout/DC Supply 7 RFout/DC Supply 8 No Connection RFin RFin RFMATCH VBIAS 1 2 3 4 GND (Top View) 8 N.C. 7 RFout 6 RFout 5 FB Figure 1. Pin Connections Table 6. ESD Protection Ch.

Freescale Semiconductor Technical Data Document Number: MML20211H Rev. 1, 9/2014 Enhancement Mode pHEMT Technology (E pHEMT) Low Noise Amplifier The MML20211H is a single stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed for a range of low noise, high linearity applications such as pico cell, femto cell, tower mounted amplifiers (TMA) and receiver front end circuits. It operates from a single volt.

MML20211HT1 Features

* Ultra Low Noise Figure: 0.65 dB @ 2140 MHz

* Frequency: 1400

* 2800 MHz

* High Reverse Isolation:

* 35 dB @ 2140 MHz

* P1dB: 21.3 dBm @ 2140 MHz

* Small

* Signal Gain: 18.6 dB @ 2140 MHz (adjustable externally)

* Third Order Output Intercept Point: 33 dBm

MML20211HT1 Datasheet (497.72 KB)

MML20211HT1 Datasheet Preview — Preview of MML20211HT1 PDF

Datasheet Details

Part number:

MML20211HT1

Manufacturer:

Freescale Semiconductor

File Size:

497.72 KB

Description:

Enhancement mode phemt.

📁 Related Datasheet

MML20242HT1 Enhancement Mode pHEMT (Freescale Semiconductor)

MML204 METAL FILM RESISTOR (HITANO)

MML207 METAL FILM RESISTOR (HITANO)

MML09211HT1 Enhancement Mode pHEMT (Freescale Semiconductor)

MML09212HT1 Enhancement Mode pHEMT (Freescale Semiconductor)

MML102 METAL FILM RESISTOR (HITANO)

MML1225 TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS (Dc Components)

MML4401 MRI Protection Diodes (Microsemi)

TAGS

MML20211HT1 Enhancement Mode pHEMT Freescale Semiconductor

MML20211HT1 Distributor