MRF9080LR3 RF Power Field Effect Transistors

Freescale Semiconductor

MRF9080LR3 Description

Freescale Semiconductor Technical Data MRF9080 Rev.5, 12/2004 RF Power Field Effect Transistors N *Channel Enhancement *Mode Lateral.
4.

MRF9080LR3 Features

* source Ω 0.91
* j2.11 0.88
* j2.65 1.6
* j2.61 2.45
* j3.38 Zload Ω 1.22
* j0.12 1.00
* j0.16 1.22
* j0.22 1.14
* j0.41 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from d

MRF9080LR3 Applications

* in 26 volt base station equipment.
* Typical Performance for GSM Frequencies, 921 to 960 MHz, 26 Volts Output Power @ P1db: 75 Watts Power Gain @ P1db: 18.5 dB Efficiency @ P1db: 55%
* Internally Matched, Controlled Q, for Ease of Use
* High Gain, High Efficiency and High Lin

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Datasheet Details

Part number: MRF9080LR3
Manufacturer: Freescale Semiconductor
File Size: 344.23 KB
Datasheet: MRF9080LR3_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors

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