MRF9080LR3 Datasheet - Freescale Semiconductor

MRF9080LR3, RF Power Field Effect Transistors

Freescale Semiconductor Technical Data MRF9080 Rev.5, 12/2004 RF Power Field Effect Transistors N *Channel Enhancement *Mode Lateral.
4.

Features

* source Ω 0.91
* j2.11 0.88
* j2.65 1.6
* j2.61 2.45
* j3.38 Zload Ω 1.22
* j0.12 1.00
* j0.16 1.22
* j0.22 1.14
* j0.41 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from d

Applications

* in 26 volt base station equipment.
* Typical Performance for GSM Frequencies, 921 to 960 MHz, 26 Volts Output Power @ P1db: 75 Watts Power Gain @ P1db: 18.5 dB Efficiency @ P1db: 55%
* Internally Matched, Controlled Q, for Ease of Use
* High Gain, High Efficiency and High Lin

MRF9080LR3_FreescaleSemiconductor.pdf