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MRF9030LR1 Datasheet - Freescale Semiconductor

MRF9030LR1 RF Power Field Effect Transistor

NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. Typical Two - Tone Performance at 945 MHz, 26 Volts.

MRF9030LR1 Features

* Integrated ESD Protection

* Designed for Maximum Gain and Insertion Phase Flatness

* Excellent Thermal Stability

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal

MRF9030LR1 Datasheet (345.55 KB)

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Datasheet Details

Part number:

MRF9030LR1

Manufacturer:

Freescale Semiconductor

File Size:

345.55 KB

Description:

Rf power field effect transistor.

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MRF9030LR1 Power Field Effect Transistor Freescale Semiconductor

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