Part number:
MRF9030LR1
Manufacturer:
Freescale Semiconductor
File Size:
345.55 KB
Description:
Rf power field effect transistor.
MRF9030LR1-FreescaleSemiconductor.pdf
Datasheet Details
Part number:
MRF9030LR1
Manufacturer:
Freescale Semiconductor
File Size:
345.55 KB
Description:
Rf power field effect transistor.
MRF9030LR1, RF Power Field Effect Transistor
NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.
The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 26 volt base station equipment.
Typical Two - Tone Performance at 945 MHz, 26 Volts
MRF9030LR1 Features
* Integrated ESD Protection
* Designed for Maximum Gain and Insertion Phase Flatness
* Excellent Thermal Stability
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal
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