MRF9030LR1 Datasheet (Freescale Semiconductor) - RF Power Field Effect Transistor

MRF9030LR1, RF Power Field Effect Transistor

NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.

The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 26 volt base station equipment.

Typical Two - Tone Performance at 945 MHz, 26 Volts

MRF9030LR1 Features

* Integrated ESD Protection

* Designed for Maximum Gain and Insertion Phase Flatness

* Excellent Thermal Stability

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal