Datasheet Details
- Part number
- MRF9030LR1
- Manufacturer
- Freescale Semiconductor
- File Size
- 345.55 KB
- Datasheet
- MRF9030LR1-FreescaleSemiconductor.pdf
- Description
- RF Power Field Effect Transistor
MRF9030LR1 Description
NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enh.
MRF9030LR1 Features
* Integrated ESD Protection
* Designed for Maximum Gain and Insertion Phase Flatness
* Excellent Thermal Stability
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal
MRF9030LR1 Applications
* with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 26 volt base station equipment.
* Typical Two - Tone Performance at 945 MHz, 26 Volts Output Power
* 30 Watts PEP Power
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