MRF9045LR1 Datasheet - Freescale Semiconductor

MRF9045LR1 RF Power FET

LIFETIME BUY LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large signal, common source amplifier applications in 28 volt base station equipment. Typical Two Tone Perfo.

MRF9045LR1 Features

* Integrated ESD Protection

* Designed for Maximum Gain and Insertion Phase Flatness

* Excellent Thermal Stability

* Characterized with Series Equivalent Large

* Signal Impedance Parameters

* Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ N

MRF9045LR1_FreescaleSemiconductor.pdf