* Integrated ESD Protection
* Designed for Maximum Gain and Insertion Phase Flatness
* Excellent Thermal Stability
* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ N
MRF9045LR1 Datasheet (630.69 KB)
MRF9045LR1
Freescale Semiconductor
630.69 KB
Rf power fet.
LIFETIME BUY
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
Freescale Semiconductor Technical Data
RF Power Field Effect Transistors
N
*Channel Enhan.
📁 Related Datasheet
MRF9045LSR1 RF Power FET (Freescale Semiconductor)
MRF9045MBR1 RF Power FET (NXP)
MRF9045MR1 RF Power FET (NXP)
MRF9045NR1 RF Power Field Effect Transistor (Freescale Semiconductor)
MRF904 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Advanced Power Technology)
MRF904 NPN SILICON RF TRANSISTOR (ASI)
MRF904 HIGH FREQUENCY TRANSISTOR (Motorola)
MRF904 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Microsemi Corporation)
MRF9002NR2 RF Power FET (Freescale Semiconductor)
MRF9002R2 RF Power Field Effect Transistor Array (Motorola Inc)
