Datasheet Details
- Part number
- MRF9045NR1
- Manufacturer
- Freescale Semiconductor
- File Size
- 464.80 KB
- Datasheet
- MRF9045NR1-FreescaleSemiconductor.pdf
- Description
- RF Power Field Effect Transistor
MRF9045NR1 Description
NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enh.
MRF9045NR1 Features
* Excellent Thermal Stability
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Dual - Lead Boltdown Plastic Package Can Also Be Used As Surface
Mount.
* 200_C Capable Plastic Package
* N Suffix Indicates Lead - Free Terminations. Ro
MRF9045NR1 Applications
* with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 28 volt base station equipment.
* Typical Performance at 945 MHz, 28 Volts Output Power
* 45 Watts PEP Power Gain
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