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MRF9045NR1 - RF Power Field Effect Transistor

MRF9045NR1 Description

NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enh.

MRF9045NR1 Features

* Excellent Thermal Stability
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Dual - Lead Boltdown Plastic Package Can Also Be Used As Surface Mount.
* 200_C Capable Plastic Package
* N Suffix Indicates Lead - Free Terminations. Ro

MRF9045NR1 Applications

* with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 28 volt base station equipment.
* Typical Performance at 945 MHz, 28 Volts Output Power
* 45 Watts PEP Power Gain

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Datasheet Details

Part number
MRF9045NR1
Manufacturer
Freescale Semiconductor
File Size
464.80 KB
Datasheet
MRF9045NR1-FreescaleSemiconductor.pdf
Description
RF Power Field Effect Transistor

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Power Field Effect Transistor Freescale Semiconductor
Freescale Semiconductor MRF9045NR1-like datasheet