MRF9045NR1 Datasheet - Freescale Semiconductor

MRF9045NR1 RF Power Field Effect Transistor

NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. Typical Performance at 945 MHz, 28 Volts Output Pow.

MRF9045NR1 Features

* Excellent Thermal Stability

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Dual - Lead Boltdown Plastic Package Can Also Be Used As Surface Mount.

* 200_C Capable Plastic Package

* N Suffix Indicates Lead - Free Terminations. Ro

MRF9045NR1-FreescaleSemiconductor.pdf