MRF904 Datasheet - Advanced Power Technology

MRF904 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Designed primarily for use in High Gain, low noise general-purpose amplifiers. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current Thermal Data PD TJMAX TSTORAGE Total Device D.

MRF904 Features

* Silicon NPN, high Frequency, To-72 packaged, Transistor

* High Power Gain - GU(max): 11 dB (typ) @ f = 450 MHz 7 dB (typ) @ f = 1 GHz

* Low Noise Figure NF = 1.5 dB (typ) @ f = 450 MHz

* High FT - 4 GHz (typ) @ IC = 15 mAdc 2 13 4 1. Emitter 2. Base 3. Collector 4

MRF904-AdvancedPowerTechnology.pdf