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MRF9002R2 - RF Power Field Effect Transistor Array

MRF9002R2 Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.Order this document by MRF9002R2/D The RF Sub - Micron MOSFET Line RF Power F.
33 pF Chip Capacitors (0805) 1.

MRF9002R2 Features

* 4.372 5.180 8.850 9.150 6.950 7.100 4.372 5.180 0.466 0.720 0.250 BSC 0.300 0.432 0.300 0.375 0.180 0.279 0.180 0.230 0.800 BSC
* 0.600 0_ 7_ 0.200 0.200 0.100 14 x e D e/2 D1 8 9 E1 8X B BOTTOM VIEW E C B S bbb M Freescale Semiconductor, Inc Y A A2 DATUM PLA

MRF9002R2 Applications

* with frequencies to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. The device is in a PFP - 16 Power Flat Pack package which gives excellent thermal performances through a sol

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Datasheet Details

Part number
MRF9002R2
Manufacturer
Motorola Inc
File Size
580.01 KB
Datasheet
MRF9002R2_MotorolaInc.pdf
Description
RF Power Field Effect Transistor Array

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