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MRF374A RF POWER FIELD EFFECT TRANSISTOR

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Description

MOTOROLA Freescale Semiconductor, Inc.SEMICONDUCTOR TECHNICAL DATA Order this document by MRF374A/D The RF MOSFET Line RF Power Field-Effect Tra.
5.

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Datasheet Specifications

Part number
MRF374A
Manufacturer
Motorola Inc
File Size
783.08 KB
Datasheet
MRF374A_MotorolaInc.pdf
Description
RF POWER FIELD EFFECT TRANSISTOR

Features

* RL 0 400 20 900 400 500 600 700 800 900 500 600 700 800 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 5. Drain Efficiency versus Frequency in Broadband Circuit η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 200 C oss , C iss , Capacitance (pF) 20 Figure 6. Performance in Broadb

Applications

* with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large
* signal, common source amplifier applications in 28/32 volt transmitter equipment.
* Typical Two
* Tone Performance @ 860 MHz, 32 Volts, Narrowband Fixture Output

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