MRF374A Datasheet (Motorola Inc) - RF POWER FIELD EFFECT TRANSISTOR

MRF374A, RF POWER FIELD EFFECT TRANSISTOR

0.8 pF Chip Capacitor, B Case, ATC 2.2 pF Chip Capacitor, B Case, ATC 0.5 * 5.0 pF Variable Capacitor, Johanson Gigatrim 47 pF Chip Capacitors, B Case, ATC 1.0 pF Chip Capacitor, B Case, ATC 10 pF Chip Capacitor, B Case, ATC 100,000 pF Chip Capacitors, B Case, ATC 15 pF Chip Capacitors, B Ca

MOTOROLA Freescale Semiconductor, Inc.

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF374A/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz.

The high gain and broadband performance of this device make it ideal for large signal, common source amplifier applications in 28/32 volt transmitter equipment.

Typic

MRF374A Features

* RL 0 400 20 900 400 500 600 700 800 900 500 600 700 800 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 5. Drain Efficiency versus Frequency in Broadband Circuit η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 200 C oss , C iss , Capacitance (pF) 20 Figure 6. Performance in Broadb