MRF5S21150R3 RF POWER FIELD EFFECT TRANSISTORS

Motorola Inc

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.Order this document by MRF5S21150/D The RF MOSFET Line RF Power Field Effect .
22 µF, 35 V Tantalum Capacitor 6.

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Datasheet Specifications

Part number: MRF5S21150R3
Manufacturer: Motorola Inc
File Size: 556.96 KB
Datasheet: MRF5S21150R3_MotorolaInc.pdf
Description: RF POWER FIELD EFFECT TRANSISTORS

Features

* br>
* 90
* 100
* 110
* 120
* 25
* ACPR @ +ACPR @ 3.84 MHz BW 3.84 MHz BW
* IM3 @ 3.84 MHz BW
* 20
* 15
* 10
* 5 0 5 10 +IM3 @ 3.84 MHz BW 15 20 25 3.84 MHz Channel BW Freescale Semiconductor, Inc f, FREQUENCY (MHz) Figure 8. 2 -

Applications

* with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications.
* Typical 2 - carrier W - CDMA Performance for VDD = 28 Volts, IDQ = 1300 m

MRF5S21150R3 Distributors

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MRF5S21150R3 POWER FIELD EFFECT TRANSISTORS Motorola Inc

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